İstanbul Medeniyet Üniversitesi
Akademik Veri Yönetim Sistemi
Yayınlar & Eserler
SCI,SSCI,AHCI İNDEKSLERİNE GİREN DERGİLERDE YAYINLANAN MAKALELER
Kahveci O., Akkaya A., Ayyildiz E., Türüt A., "COMPARISON OFTHE Ti/n-GaAs SCHOTTKY CONTACTS' PARAMETERS FABRICATED USING DC MAGNETRON SPUTTERING AND THERMAL EVAPORATION", SURFACE REVİEW AND LETTERS, vol.24, 2017
Orak İ., Kocyigit A., Türüt A., "The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique", JOURNAL OF ALLOYS AND COMPOUNDS, vol.691, pp.873-879, 2017
Kocyigit A., Orak İ., Aydogan S., Caldiran Z., Türüt A., "Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique", JOURNAL OF MATERİALS SCİENCE-MATERİALS IN ELECTRONİCS, vol.28, pp.5880-5886, 2017
Ejderha K., Asubay S., Yıldırım N., Güllü Ö., Türüt A., Abay B., "THE CHARACTERISTIC DIODE PARAMETERS IN Ti/p-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE MEASUREMENT TEMPERATURE", SURFACE REVİEW AND LETTERS, vol.24, 2017
Ozerli H., Bekereci A., Türüt A., Karataş Ş., "Electrical and photovoltaic properties of Ag/p-Si structure with GO doped NiO interlayer in dark and under light illumination", JOURNAL OF ALLOYS AND COMPOUNDS, vol.718, pp.75-84, 2017 (Link)
Ejderha K., Karabulut A., Turkan N., Türüt A., "The Characteristic Parameters of Ni/n-6H-SiC Devices Over a Wide Measurement Temperature Range", SİLİCON, vol.9, pp.395-401, 2017
Sahin Y., Aydoğan Ş., Ekinci D., Türüt A., "The performance of the anthraquinone/p-Si and the pyridine/p-Si rectifying device under X-ray irradiation", MATERIALS CHEMISTRY AND PHYSICS, vol.183, pp.516-523, 2016
Guzel A., Duman S., Yildirim N., Türüt A., "Electronic Transport of an Ni/n-GaAs Diode Analysed Over a Wide Temperature Range", JOURNAL OF ELECTRONIC MATERIALS, vol.45, pp.2808-2814, 2016
Türüt A., Karabulut A., Ejderha K., Biyikli N., "Capacitance-conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layer", MATERIALS RESEARCH EXPRESS, vol.2, 2015
Güzeldir B., Saglam M., Ates A., Türüt A., "Determination of the some electronic parameters of nanostructure copper selenide and Cu/Cu3Se2/n-GaAs/In structure", JOURNAL OF ALLOYS AND COMPOUNDS, vol.627, pp.200-205, 2015
Yilmaz M., Caldiran Z., Deniz A.R., Aydogan S., Gunturkun R., Türüt A., "Preparation and characterization of sol-gel-derived n-ZnO thin film for Schottky diode application", APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol.119, pp.547-552, 2015
Türüt A., Karabulut A., Ejderha K., Biyikli N., "Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures", MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.39, pp.400-407, 2015
Orak I., Ejderha K., Türüt A., "The electrical characterizations and illumination response of Co/N-type GaP junction device", CURRENT APPLIED PHYSICS, vol.15, pp.1054-1061, 2015
Kacus H., Aydogan S., Ekinci D., Kurudirek S.V., Türüt A., "Optical absorption of the anthracene and temperature-dependent capacitance-voltage characteristics of the Au/anthracene/n-Si heterojunction in metal-organic-semiconductor configuration", PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, vol.74, pp.505-509, 2015
Gullu O., Türüt A., "Electronic Properties of Cu/n-InP Metal-Semiconductor Structures with Cytosine Biopolymer", ACTA PHYSICA POLONICA A, vol.128, pp.383-388, 2015
Duman S., Ozcelik F.S., Gürbulak B., Gulnahar M., Türüt A., "Current-Voltage and Capacitance-Conductance-Voltage Characteristics of Al/SiO2/p-Si and Al/Methyl Green (MG)/p-Si Structures", METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, vol.46A, pp.347-353, 2015
Türüt A., Dogan H., Yildirim N., "The interface state density characterization by temperature-dependent capacitance-conductance-frequency measurements in Au/Ni/n-GaN structures", MATERIALS RESEARCH EXPRESS, vol.2, 2015
Orak İ., Ejderha K., Sonmez E., Alanyalioglu M., Türüt A., "The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode", MATERIALS RESEARCH BULLETIN, vol.61, pp.463-468, 2015
Doğan H., Yıldırım N., Orak I., Elagoz S., Türüt A., "Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures", PHYSICA B-CONDENSED MATTER, vol.457, pp.48-53, 2015
Ozerden E., Ocak Y.S., Tombak A., Kılıçoğlu T., Türüt A., "Electrical and photoelectrical properties of Ag/n-type Si metal/semiconductor contact with organic interlayer", THIN SOLID FILMS, vol.597, pp.14-18, 2015
Korucu D., Duman S., Türüt A., "The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography", MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.30, pp.393-399, 2015
Caldiran Z., Aydogan S., Yesildag A., Ekinci D., Kurudirek S.V., Türüt A., "Temperature-dependent current-voltage measurements of Au/C9H7N/p-Si: Characterization of a metal-organic-semiconductor device", MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.34, pp.58-64, 2015
Güllü Ö., Türüt A., "Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer", MATERIALS SCIENCE-POLAND, vol.33, pp.593-593, 2015
Orak I., Türüt A., Toprak M., "The comparison of electrical characterizations and photovoltaic performance of Al/p-Si and Al/Azure C/p-Si junctions devices", SYNTHETIC METALS, vol.200, pp.66-73, 2015
Türüt A., Korucu D. , "Temperature Dependence Of Schottky Diode Characteristics Prepared With Photolithography Technique", INTERNATIONAL JOURNAL OF ELECTRONICS, vol.101, pp.1595-1606, 2014 (Link) (Abstract)
Bıyıklı N., Karabulut A., Efeolu H., Guzeldir B., Türüt A., "Electrical characteristics of Au/Ti/n-GaAs contacts over a wide measurement temperature range", PHYSICA SCRIPTA, vol.89, 2014 (Link)
Orak İ., Toprak M., Türüt A., "Illumination impact on the electrical characterizations of an Al/Azure A/p-Si heterojunction", PHYSICA SCRIPTA, vol.89, 2014
Karataş Ş., Çakar M., Türüt A., "On the electrical characteristics of the Al/rhodamine-101/p-Si MS structure at low temperatures", MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.28, pp.135-143, 2014
Ejderha K., Duman S., Nuhoglu C., Urhan F., Turut A., "Effect of temperature on the current (capacitance and conductance)-voltage characteristics of Ti/n-GaAs diode", JOURNAL OF APPLIED PHYSICS, vol.116, 2014
Türüt A., Yildirim N., Ejderha K., "Temperature-Dependent Current-Voltage Characteristics In Thermally Annealed Ferromagnetic Co/N-Gan Schottky Contacts", EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, vol.68, 2014 (Link)
Korucu D. , Türüt A., Altindal Ş., "The Origin Of Negative Capacitance In Au/N-Gaas Schottky Barrier Diodes (Sbds) Prepared By Photolithography Technique In The Wide Frequency Range", Current Applied Physics, vol.13, pp.1101-1108, 2013 (Link) (Abstract)
Türüt A., Korucu D., Efeoğlu H., "Temperature Dependent I-V Characteristics Of An Au/N-Gaas Schottky Diode Analyzed Using Tung'S Model", PhysicaB, vol.414, pp.35-41, 2013 (Link) (Abstract)
Korucu D. , Türüt A., Turan R., Altindal Ş., "Origin Of Forward Bias Capacitance Peak And Intersection Behavior Of C And G/W Of Ag/P-Inp Schottky Barrier Diodes", Materials Science in Semiconductor Processing, vol.16, pp.344-351, 2013 (Link) (Abstract)
Tecimer H., Türüt A., Uslu H., Altindal Ş., Uslu İ., "Temperature Dependent Current-Transport Mechanism In Au/(Zn-Doped)Pva/N-Gaas Schottky Barrier Diodes (Sbds)", Sensors and Actuators A:physical, vol.199, pp.194-201, 2013 (Link) (Özet)
Türüt A., Efeoğlu H., "The Current-Voltage Characteristics Of The Au/Mbe N-Gaas Schottky Diodes In A Wide Temperature Range", International Journal of Modern Physics B, vol.27, pp.0-0, 2013 (Özet)
Korucu D. , Karataş Ş., Türüt A., "Analysis Of Interface States And Series Resistances In Au/P-Inp Structures Prepared With Photolithography Technique", INDIAN JOURNAL OF PHYSICS, vol.87, 2013 (Özet)
Karataş Ş., Yıldırım N., Türüt A., "Electrical Properties And Interface State Energy Distributions Of Cr/N-Si Schottky Barrier Diode", SUPERLATTICES AND MICROSTRUCTURES, vol.64, pp.483-494, 2013 (Link) (Abstract)
Ejderha K., Yıldırım N., Türüt A., Abay B., "Temperature-Dependent I-V Characteristics In Thermally Annealed Co/P -Inp Contacts", E. P. J.-Appl. Phys, vol.57, 2012
Vural Ö.F. , Şafak Y., Türüt A., Altındal Ş., "Temperature Dependent Negative Capacitance Behavior Of Al/Rhodamine-101/N-Gaas Schottky Barrier Diodes And Rs Effects On The C-V And (G/Ω)-V Characteristics", Journal of Alloys and Compounds, vol.513, 2012
Güllü Ö., Aydoğan Ş., Türüt A., "Electronic Parameters Of High Barrier Au/Rhodamine-101/N-Inp Schottky Diode With Organic Interlayer", Thin Solid Film, vol.520, 2012
Güllü Ö., Aydoğan Ş., Türüt A., "E High Barrier Schottky Diode With Organic Interlayer", Solid State Communications, vol.152, 2012
Türüt A., Korucu D. , Turut A., Turan R., Altindal Ş., "166. On The Profile Of Frequency Dependent Interface States And Series Resistance In Au/P-Inp Sbds Prepared With Photolithography Technique", Science China Physics, Mechanics and Astronomy, vol.55, pp.1604-1612, 2012 (Link)
Güllü Ö., Pakma O., Türüt A., "Current Density-Voltage Analyses And Interface Characterization In Ag/Dna/P-Inp Structures", Journal of Applied Physics, vol.111, pp.0-0, 2012
Duman S., Ejderha K., Yiğit O., Türüt A., "Determination Of Contact Parameters Of Ni/N-Gap Schottky Contacts", Microelectronics Reliability, vol.52, pp.1005-1011, 2012
Korucu D., Efeoğlu H., Türüt A., Altındal Ş., "Evaluation Of Lateral Barrier Height Of Inhomogeneous Photolithography-Fabricated Au/N-Gaas Schottky Barrier Diodes From 80 K To 320 K", Mater. Sci. Semiconduc. Process, vol.15, pp.480-485, 2012
Aydoğan Ş., Sağlam M. , Türüt A., "Effect Of Temperature On The Capacitance–Frequency And Conductance–Voltage Characteristics Of Polyaniline/P-Si/Al Mis Device At High Frequencies", Microelectronics Reliability, vol.52, 2012
Gülen Y., Ejderha K., Nuhoğlu Ç., Türüt A., "Schottky Barrier Height Modification In Au/N-Type 6h–Sic Structures By Pbs Interfacial Layer", Microelectronic Engineering, vol.88, 2011
Güllü Ö., Türüt A., "Electronic Properties Of Al/Dna/P-Si Mis Diode: Application As Temperature Sensor", Journal of Alloys and Compounds, vol.509, 2011
Gülen Y., Alanyalıoğlu M., Ejderha K., Nuhoğlu Ç., Türüt A., "Electrical And Optical Characteristicsof Au/Pbs/N-6h–Sic Structures Prepared By Electrodeposition Of Pbs Thin Film On N-Type 6h–Sic Substrate", Journal of Alloys and Compounds, vol.509, 2011
Duman S., Gürbulak B., Doğan S. , Türüt A., "Capacitance And Conductance-Frequency Characteristics Of Au-Sb/P-Gase:Gd Schottky Barrier Diyote", Vacuum, vol.85, 2011
Ejderha K., Zengin A., Orak İ., Taşyürek B., Türüt A., "Dependence Of Characteristic Diode Parameters On Sample Temperature In Ni/Epitaxy N-Si Contacts", Mater. Sci. Semiconduc. Process, vol.14, pp.5-12, 2011
Aydoğan Ş., İncekara Ü., Türüt A., "The Effects Of 12 Mev Electron Irradiation On The Electrical Characteristics Of The Au/Aniline Blue/P-Si/Al Device", Microelect. Reliability, vol.51, 2011
Aydoğan Ş., Türüt A., "Influence Of 12 Mev Electron Irradiation On The Electrical And Photovoltaic Properties Of Schottky Type Solar Cell Based On Carmine", Radiation Phys. and Chem, vol.80, 2011
Aydoğan Ş., Şerifoğlu K., Türüt A., "The Effect Of Electron Irradiation On The Electrical Characteristics Of The Aniline Blue/N-Si/Al Device", Solid State Sci., vol.13, 2011
Akbay A., Korkut H., Ejderha K., Korkut T., Türüt A., "Responses Of Pt/N-Inp Schottky Diode To Electron Irradiation In Different Temperature Conditions", J. Radioanal Nucl. Chem, vol.289, 2011
Güzeldir B., Sağlam M. , Ateş A., Türüt A., "Effects Of Ageing On The Electrical Characteristics Of Cd/Cds/N-Si/Au–Sb Structure Deposited By Silar Method", J. Phys. Chem. Solid, vol.72, 2011
Türüt A., Demircioğlu Ö., Karataş Ş., Yıldırım N., Bakkaloğlu Ö.F. , "Temperature Dependent Current-Voltage And Capacitance-Voltage Characteristics Of Chromium Schottky Contacts Formed By Electrodeposition Technique On N-Type Si", Journal of Alloys and Compounds, vol.509, 2011
Vural Ö., Şafak Y., Altındal Ş., Türüt A., "Current-Voltage Charactertics Of Al/Rhodamine-101/N-Gaas Structures In The Wide Temperature Range", Current Appl. Phys, vol.10, 2010
Karataş Ş., Türüt A., "The Frequency-Dependent Electrical Characteristics Of Interfaces In The Sn/P-Si Metal Semiconductor Structures", Microelectronics Reliability, vol.50, 2010
Güllü Ö., Kılıçoğlu T., Türüt A., "Electronic Properties Of The Metal/Organic Interlayer/Inorganic Semiconductor Sandwich Device", J. Phys. and Chem. Solid, vol.71, 2010
Güllü Ö., Asubay S., Aydoğan Ş., Türüt A., "Electrical Characterization Of The Al/New Fuchsin/N-Si Organic-Modified Device", Physica E, vol.42, 2010
Güllü Ö., Asubay S., Biber M., Kılıçoğlu T., Türüt A., "Electrical Properties Of Safranine T/P-Si Organic/Inorganic Semiconductor Devices", Eur. Phys. J. Appl. Phys, vol.50, 2010
Göksu T., Yıldırım N., Korkut H., Özdemir A.F., Türüt A., Kökçe A., "Barrier Height Temperature Coefficient In Ideal Ti/N-Gaas Schottky Contacts", Microelectronic Engineering, vol.87, 2010
Yıldırım N., Ejderha K., Türüt A., "On Temperature-Dependent Experimental I-V And C-V Data Of Ni/N-Gan Schottky Contacts", Journal of Applied Physics, vol.108, 2010
Güllü Ö., Türüt A., "N-Type Inp Schottky Diodes With Organic Thin Layer: Electrical And Interfacial Properties", J. Vac. Sci. Technol. B, vol.28, 2010
Aydoğan Ş., İncekara Ü., Deniz A., Türüt A., "Extraction Of Electronic Parameters Of Schottky Diode Based On An Organic Indigotindisulfonate Sodium (Is)", Solid State Commun, vol.150, 2010
Yıldırım N., Türüt A., Türüt V. , "The Theoretical And Experimental Study On Double-Gaussian Distribution In Inhomogeneous Barrier-Height Schottky Contacts", Microelectronic Engineering, vol.87, 2010
Aydoğan Ş., İncekara Ü., Deniz A., Türüt A., "Extraction Of Electronic Parameters Of Schottky Diode Based On An Organic Orcein", Microelectronic Engineering, vol.87, 2010
Aydoğan Ş., İncekara Ü., Türüt A., "Determination Of Contact Parameters Of Au/Carmine/N-Si Schottky Device", Thin Solid Film, vol.518, 2010
Güllü Ö., Türüt A., "Electrical Analysis Of Organic Dye-Based Mis Schottky Contacts", Microelectronic Engineering, vol.87, 2010
Ejderha K., Yıldırım N., Türüt A., Abay B., "Influence Of Interface States On The Temperature Dependence And Current-Voltage Characteristics Of Ni/P-Inp Schottky Diodes", Superlattice and Microstruc, vol.47, 2010
Korkut H., Yıldırım N., Türüt A., "Temperature-Dependent Current-Voltage Characteristics Of Cr/N-Gaas Schottky Diodes", Microelectronic Engineering, vol.86, pp.111-116, 2009
Güllü Ö., Türüt A., "Electrical Analysis Of Organic Interlayer Based Metal/Interlayer/Semiconductor Diode Structures", Journal of Applied Physics, vol.106, 2009
Duman S., Gürbulak B., Doğan S. , Türüt A., "Electrical Characteristics And Inhomogeneous Barrier Analysis Of Au-Be/P-Inse:Cd Schottky Barrier Diodes", Microelectronic Engineering, vol.86, 2009
Cimilli F., Efeoğlu H., Sağlam M. , Türüt A., "Temperature-Dependent Current-Voltage And Capacitance-Voltage Characteristics Of The Ag/N-Inp/In Schottky Diodes", J. Mater. Sci.-Mater. in Electron, vol.20, 2009
Korkut H., Yıldırım N., Türüt A., Doğan H., "Analysis Of Current–Voltage–Temperature Characteristics And T0 Anomaly In Cr/N-Gaas Schottky Diodes Fabricated By Magnetron Sputtering Technique", Mater. Sci. Engineer. B, vol.157, pp.1-3, 2009
Yıldırım N., Korkut H., Türüt A., "Temperature-Dependent Schottky Barrier Inhomogeneity Of Ni/N-Gaas Diodes", E.P J. Appl. Phys, vol.45, 2009
Aydoğan Ş., Güllü Ö., Türüt A., "Fabrication And Electrical Characterization Of A Silicon Schottky Device Based On Organic Material", Physica Scripta, vol.79, 2009
Cimilli F., Sağlam M. , Efeoğlu H., Türüt A., "Temperature-Dependent Current-Voltage Characteristics Of The Au/N-Inp Diodes With Inhomogeneous Schottky Barrier Height", Physica B, vol.404, 2009
Aydoğan Ş., Çınar K., Asıl H., Coşkun C., Türüt A., "Electrical Characterization Of Au/N-Zno Schottky Contacts On N-Si", Journal of Alloys and Compounds, vol.476, 2009
Aydoğan Ş., Sağlam M. , Türüt A., "Series Resistance Determination Of Au/Polypyrrole /P-Si/Al Structure By Current–Voltage Measurements At Low Temperatures", Mater. Sci. and Engineer. C, vol.29, 2009
Asubay S., Güllü Ö., Türüt A., "Determination Of The Laterally Homogeneous Barrier Height Of Metal/P-Inp Schottky Barrier Diodes", Vacuum, vol.83, 2009
Çakar M., Güllü Ö., Yıldırım N., Türüt A., "Electrical Properties Of Organic-Inorganic Semiconductor Device Based On Rhodamine-101", J. Electron. Mater, vol.38, 2009
Yıldırım N., Türüt A., "A Theoretical Analysis Together With Experimental Data Of Inhomogeneous Schottky Barrier Di-Odes", Microelectronic Engineering, vol.86, 2009
Yıldırım N., Doğan H., Doğan H., Türüt A., "Dependence Of Characteristic Diode Parameters In Ni/N-Gaas Contacts On Thermal Annealing And Sample Temperature", Int. J. Modern Phys. B, vol.23, 2009
Türüt A., Korkut H., "Thermal Annealing Effects On I-V-T Characteristics Of Sputtered Cr/N-Gaas Diodes", Physica B, vol.404, 2009
Ejderha K., Yıldırım N., Abay B., Türüt A., "Examination By Interfacial Layer And Inhomogeneous Barrier Height Model Of Temperature-Dependent I-V Characteristics In Co/P-Inp Contacts", Journal of Alloys and Compounds, vol.484, 2009
Çınar K., Yıldırım N., Coşkun C., Türüt A., "Temperature Dependence Of Current-Voltage Characteristics In Highly Doped Ag/P-Gan/In Schottky Diodes", Journal of Applied Physics, vol.106, 2009
Karataş Ş., Türüt A., Altındal Ş., "Irradiation Effects On The C-V And G/W-V Characteristics Of Sn/P-Si (Ms) Structures", Radiation Phys. and Chem, vol.78, 2009
Güllü Ö., Asubay S., Türüt A., "Electricalcharacterization Of Organic-On-Inorganic Semiconductorschottky Structures", J. Phys.: Condens. Matter, vol.20, 2008
Aydoğan Ş., Sağlam M. , Türüt A., "Some Electrical Properties Of Polyaniline/P-Si/Al Structure At 300 K And 77 K Temperatures", Microelectronic Engineering, vol.85, 2008
Güllü Ö., Barış Ö. , Biber M., Türüt A., "Laterally Inhomogeneous Barrier Analysis Of The Methyl Violet/P-Si Organic/Inorganic Hybrid Schottky Structures", Applied Surface Science, vol.254, 2008
Sefaoğlu A., Duman S., Doğan S. , Gürbulak B., Tüzümen S., Türüt A., "The Effects Of The Temperature And Annealing On Current–Voltage Characteristics Of Ni/N-Type 6h-Sic Schottky Diode", Microelectronic Engineering, vol.85, 2008
Asubay S., Güllü Ö., Türüt A., "Determination Of The Laterally Homogeneous Barrier Height Of Thermally Annealed And Unannealed Au/P-Inp/Zn-Au Schottky Barrier Diodes", Applied Surface Science, vol.254, 2008
Doğan H., Yıldırım N., Türüt A., "Thermally Annealed Ni/N-Gaas(Si)/In Schottky Barrier Diodes. Microelectronic Engineer", Microelectronic Engineering, vol.85, 2008
Duman S., Doğan S. , Gürbulak B., Türüt A., "The Barrier-Height Inhomogeneity In Identically Prepared Ni/N-Type 6h-Sic Schottky Diodes", Applied Physics A, vol.91, 2008
Güllü Ö., Çankaya M., Biber M., Türüt A., "Fabrication And Electrical Properties Of Organic-On-Inorganic Schottky Devices", J. Phys.: Condens. Matter, vol.20, 2008
Güler G., Güllü Ö., Bakkaloğlu Ö.F. , Türüt A., "Determination Of Lateral Barrier Height Of Identically Prepared Ni/N-Type Si Schottky Barrier Diodes By Electrodeposition", Physica B, vol.403, pp.2211-2214, 2008
Güllü Ö., Aydoğan Ş., Türüt A., "Fabrication And Electrical Characteristics Of Al/Psp/N-Si/Ausb Structure", Vacuum, vol.82, pp.1264-1268, 2008
Güllü Ö., Çankaya M., Barış Ö. , Biber M., Özdemir H., Güllüce M., Türüt A., "Dna- Based Organic-On-Inorganic Semiconductor Schottky Structures", Applied Surface Science, vol.254, pp.5175-5180, 2008
Güllü Ö., Aydoğan Ş., Türüt A., "Fabrication And Electrical Properties Of Al/Safranin T/N-Si/Ausb Structure", Semiconductor Science and Technology, vol.23, 2008
Güllü Ö., Çankaya M., Barış Ö. , Türüt A., "Dna- Modified Indium Phosphide Schottky Device", Appl. Phys. Lett, vol.92, 2008
Güllü Ö., Çankaya M., Biber M., Türüt A., "Gamma Irradiation-Induced Changes At The Electrical Characteristics Of Organic-Based Schottky Structures", J. Phys. D: Appl. Phys, vol.41, 2008
Güllü Ö., Aydoğan Ş., Türüt A., "Fabrication And Electrical Characteristics Of Schottky Diode Based On Organic Material", Microelectronic Engineering, vol.85, pp.1647-1651, 2008
Güllü Ö., Türüt A., "Photovoltaic And Electronic Properties Of Quercetin/P-Inp Solar Cells", Solar Energy Materials & Solar Cells, vol.92, pp.1205-1210, 2008
Güllü Ö., Biber M., Van Meirhaeghe R.L., Türüt A., "Effects Of The Barrier Metal Thickness And Hydrogen Pre-Annealing On The Characteristic Parameters Of Au/N-Gaas Metal–Semiconductor Schottky Contacts", Thin Solid Film, vol.516, pp.7851-7856, 2008
Güllü Ö., Aydoğan Ş., Şerifoğlu K., Türüt A., "Electron Irradiation Effects On The Organic-On-Inorganic Silicon Schottky Structure", Nucl. Instr. Meth. Phys. Res. A, vol.593, 2008
Aydoğan Ş., Sağlam M. , Türüt A., "Reverse Bias Capacitance-Voltage Characteristics Of Al/Polyaniline/P-Si/Al Structure As A Function Of Temperature", J. Non-Crystal. Solid, vol.354, 2008
Güllü Ö., Çankaya M., Barış Ö. , Türüt A., "Dna-Based Organic-On-Inorganic Devices: Barrier Enhancement And Temperature Issues", Microelectronic Engineering, vol.85, pp.2250-2255, 2008
Güllü Ö., Biber M., Türüt A., "Electrical Characteristics And Inhomogeneous Barrier Analysis Of Aniline Green/P-Si Heterojunctions", Journal of Materials Sci.-Materials in Electron, vol.19, pp.986-991, 2008
Uğurel E., Aydoğan Ş., Şerifoğlu K., Türüt A., "Effect Of 6 Mev Electron Irradiation On Electrical Characteristics Of The Au/N-Si/Al Schottky Diode", Microelectronic Engineering, vol.85, 2008
Aydoğan Ş., Güllü Ö., Türüt A., "Fabrication And Electrical Properties Of Al/Aniline Green/N-Si/Ausb Structure", Mater. Sci. Semiconduc. Process, vol.11, 2008
Asubay S., Güllü Ö., Abay B., Türüt A., Yılmaz A., "Temperature-Dependent Behavior Of Ti/P-Inp/Znau Schottky Barrier Diodes", Semiconductor Science and Technology, vol.23, 2008
Çakar M., Yıldırım N., Doğan H., Türüt A., "The Conductance And Capacitance-Frequency Characteristics Of Au/Pyronine-B/P-Type Si/Al Contacts", Applied Surface Science, vol.253, pp.3464-3468, 2007
Duman S., Gürbulak B., Türüt A., "Temperature Dependent Optical Absorption Measurements And Schottky Contact Behavior In Layered Semiconductor N-Type Inse(:Sn)", Applied Surface Science, vol.253, pp.3899-3905, 2007
Karataş Ş., Altındal Ş., Türüt A., Çakar M., "Electrical Transport Characteristics Of Sn/P-Si Schottky Contacts Revealed From I-V-T And C-V-T Measurements", Physica B, vol.392, 2007
Özdemir A.F., Gök A., Türüt A., "The Electrical Measurements In Poly(2-Chloroaniline) Based Thin Film Sandwich Devices", Thin Solid Film, vol.515, 2007
Aydın M.E., Türüt A., "The Electrical Characteristics Of Sn/Methyl-Red/P-Type Si/Al Contacts", Microelectronic Engineering, vol.84, 2007
Doğan H., Korkut H., Yıldırım N., Türüt A., "Prediction Of Lateral Barrier Height In Identically Prepared Ni/N-Type Gaas Schottky Barrier Diodes", Applied Surface Science, vol.253, 2007
Cimilli F., Sağlam M. , Türüt A., "Determination Of The Lateral Barrier Height Of Inhomogeneous Au/N-Type Inp/In Schottky Barrier Diyotes", Semiconductor Science and Technology, vol.22, pp.851-854, 2007
Aydın M.E., Yıldırım N., Türüt A., "Temperature-Dependent Behavior Of Ni/4h-Nsic Schottky Contacts", Journal of Applied Physics, vol.102, 2007
Vural Ö., Yıldırım N., Altındal Ş., Türüt A., "Current--Voltage Characteristics Of Al/Rhodamine-101/N-Gaas And Cu/Rhodamine-101/N-Gaas Rectifier Contacts", Shynthetic Metals, vol.157, 2007
Güllü Ö., Biber M., Duman S., Türüt A., "Electrical Characteristics Of The Hydrogen Pre-Annealed Au/N-Gaas Schottky Barrier Diodes As A Function Of Temperature", Applied Surface Science, vol.253, 2007
Karataş Ş., Temirci C., Çakar M., Türüt A., "Temperature Dependence Of The Current–Voltage Characteristics Of The Al/Rhodamine-101/P-Si(1 0 0) Contacts", Applied Surface Science, vol.252, 2006
Biber M., Güllü Ö., Forment S. , Van Meirhaeghe R.L., Türüt A., "The Effect Of Schottky Metal Thickness On Barrier Height Inhomogeneity In Identically Prepared Au/N-Gaas Schottky Diyotes", Semiconductor Science and Technology, vol.21, pp.1-5, 2006
Özdemir A.F., Türüt A., Kökçe A., "The Double Gaussian Distribution Of Barrier Heights In Au/N-Gaas Schottky Diodes From I-V-T Characteristics", Semiconductor Science and Technology, vol.21, 2006
Aydoğan Ş., Sağlam M. , Türüt A., "The Temperature Dependence Of Current–Voltage Characteristics Of The Au/Polypyrrole/P-Si/Al Heterojunctions", J. Phys.: Condens. Matter, vol.18, 2006
Sağlam M. , Türüt A., "Aging Effects On The Interface State Density Obtained From Current-Voltage And Capacitance-Frequency Characteristics Of Polypyrrole/P-Si/Al Structure", J. Appl. Polymer Sci, vol.101, 2006
Türüt A., Doğan H., "Determination Of The Characteristic Parameters Of Sn/N-Gaas/Al–Ge Schottky Diodes By A Barrier Height Inhomogeneity Model", Semiconductor Science and Technology, vol.21, 2006
Aydoğan Ş., Sağlam M. , Türüt A., "Electrical Properties Of Polypyrrole/P-Inp Structure", Polymer Sci. B: Polymer Phys, vol.45, 2006
Karataş Ş., Türüt A., "The Determination Of Electronic And Interface State Density Distributions Of Au/N-Type Gaas Schottky Barrier Diodes", Physica B, vol.381, 2006
Karataş Ş., Türüt A., "Electrical Properties Of Sn/P-Si (Ms) Schottky Barrier Diodes To Be Exposed To (Co)-C-60 Gamma-Ray Source", Nucl. Instr. Meth. Phys. Res. A, vol.566, pp.584-589, 2006
Çakar M., Yıldırım N., Karataş Ş., Temirci C., Türüt A., "Current-Voltage And Capacitance-Voltage Characteristics Of Sn/Rhodamine-101/N-Si And Snrhodamine-101/P-Si Schottky Barrier Diodes", J. Appl. Phys, vol.100, 2006
Aydoğan Ş., Sağlam M. , Türüt A., "On The Some Electrical Properties Of The Non-Ideal Ppy/P-Si/Al Structure", Polymer, vol.46, 2005
Çetin H., Ayyıldız E. , Türüt A., "Barrier Height Enhancement And Stability Of The Au/N-Inp Schottky Barrier Diodes Oxidized By Absorbed Water Vapor", J. Vac. Sci. Technol. B, vol.23, 2005
Aydoğan Ş., Sağlam M. , Türüt A., "The Effects Of The Temperature On The Some Parameters Obtained From Current–Voltage And Capacitance–Voltage Characteristics Of Polypyrrole/N-Si Structure", Polymer, vol.46, 2005
Aydoğan Ş., Sağlam M. , Türüt A., "On The Barrier Inhomogeneities Of Polyaniline/P-Si/Al Structure At Low Temperature", Applied Surface Science, vol.250, pp.43-47, 2005
Aydoğan Ş., Sağlam M. , Türüt A., Onganer Y., "The Effects Of The Temperature On Current-Voltage Characteristics Of The Sn/Polypyrrole/N-Si Structures", Shnhetic Metals, vol.150, pp.15-20, 2005
Biber M., Coşkun C., Türüt A., "Current-Voltage-Temperature Analysis Of Inhomogeneous Au/N-Gaas Schottky Contacts", E. P. J.-Appl. Phys, vol.31, 2005
Çetin H., Şahin B., Ayyıldız E. , Türüt A., "Ti/P-Si Schottky Barrier Diodes With Interfacial Layer Prepared By Thermal Oxidation", Physica B, vol.364, pp.133-141, 2005
Aydoğan Ş., Sağlam M. , Türüt A., "Characterization Of Capacitance–Frequency Features Of Sn/ Polypyrrole/N-Si Structure As A Function Of Temperature", Polymer, vol.46, 2005
Nuhoğlu Ç., Özerden E., Türüt A., "The Dependence Of I-V And C-V Characteristics On Temperature In The H-Terminated Pb/P-Si(100) Schottky Barrier Diodes", Applied Surface Science, vol.250, 2005
Karataş Ş., Türüt A., Altındal Ş., "Effects Of 60co -Ray Irradiation On The Electrical Characteristics Of Au/N-Gaas (Ms) Structures", Nucl. Instr. Meth. Phys. Res. A, vol.555, 2005
Aydoğan Ş., Sağlam M. , Türüt A., "Current-Voltage And Capacitance-Voltage Characteristics Of Polypyrrole/P-Inp Structure", Vacuum, vol.77, 2005
Forment S. , Biber M., Van Meirhaeghe R.L., Leroy W.P., Türüt A., "Influence Of Hydrogen Treatment And Annealing Processes Upon The Schottky Barrier Height Of Au/N-Gaas And Ti/N-Gaas Diodes", Semiconductor Science and Technology, vol.19, pp.1391-1396, 2004
Temirci C., Çakar M., Türüt A., Onganer Y., ", Low And High Frequency C-V Characteristics Of The Contacts Formed By Sublimation Of The Nonpolymeric Organic Compound On P-Type Si Substrate", Phys. Stat. Sol. (a), vol.201, pp.3077-3086, 2004
Sağlam M. , Korucu D., Türüt A., "The Effects Of The Ageing On The Characteristic Parameters Of Polyaniline/P-Type Si/Al Structure", Applied Surface Science, vol.230, 2004
Akkılıç K., Aydın M.E. , Türüt A., "The Effect Of Series Resistance On The Relationship Between Barrier Heights And Ideality Factors Of The Inhomogeneous Schottky Barrier Diodes", physica scripta, vol.70, 2004
Çetin H., Şahin B., Ayyıldız E. , Türüt A., "The Barrier Height Inhomogeneity In Identically Prepared H-Terminated Ti/P-Si Schottky Barrier Diodes", Semiconductor Science and Technology, vol.19, 2004
Çakar M., Türüt A., Onganer Y., "Rectifying Pyronine-B/P-Type Silicon Junctions Formed By Sublimation Of Pyronine-B", J Mater Sci-Mater in Electron, vol.15, pp.47-53, 2004
Çakar M., Temirci C., Türüt A., "The Schottky Barrier Height Of The Rectifying Cu/, Au/, Sn/ And Al/Pyronine-B/P-Si Contacts", Shynthetic Metals, vol.142, pp.177-180, 2004
Türüt A., Sağlam M. , Korucu D., "The Effects Of The Time-Dependent On The Characteristic Parameters Of Polypyrrole/P-Type Si/Al Diode", Polymer, vol.43, 2004
Sağlam M. , Cimilli C., Türüt A., "Experimental Determination Of The Laterally Homogeneous Barrier Height Of Au/N-Si Schottky Barrier Diodes", Physica B, vol.348, pp.397-403, 2004
Karataş Ş., Türüt A., "The Determination Of Interface State Energy Distribution Of The H-Terminated Zn/P-Type Si Schottky Diodes With High Series Resistance By The Admittance Spectroscopy", Vacuum, vol.74, pp.45-53, 2004
Akkiliç K., Türüt A., Çankaya G., Kılıçoğlu T., "Correlation Between Barrier Heights And Ideality Factors Of Cd/N-Si And Cd/P-Si Schottky Barrier Diodes", Solid State Communications, vol.125, pp.551-556, 2003
Özdemir A.F., Türüt A., Kökçe A., Özdemir A.F., "The Interface State Energy Distribution From Capacitance-Frequency Characteristics Of Gold/N-Type Gallium Arsenide Schottky Barrier Diodes Exposed To Air", Thin Solid Films, vol.425, 2003
Akkiliç K., Kılıçoğlu T., Türüt A., "Linear Correlation Between Barrier Heights And Ideality Factors Of Sn/N-Si Schottky Diodes With And Without The Interfacial Native Oxide Layer", Physica B, vol.337, 2003
Çakar M., Temirci C., Türüt A., Çankaya G., "Effect Of Hydrostatic Pressure On Characteristics Parameters Of Sn/P-Si Schottky Diodes", Physica Scripta, vol.68, 2003
Karataş Ş., Altındal Ş., Türüt A., Özmen A., "Temperature Dependence Of Characteristic Parameters Of The H-Terminated Sn/P-Si(100) Schottky Contacts", Applied Surface Science, vol.217, 2003
Çakar M., Türüt A., "The Conductance And Capacitance-Frequency Characteristics Of The Organic Compound (Pyronine-B)/P-Si Structures", Shynthetic Metals, vol.138, pp.549-554, 2003
Çakar M., Biber M., Sağlam M. , Türüt A., "The Conductance And Capacitance-Frequency Characteristics Of Polypyrrole/P-Type Si Structures", J. Polymer Sci. B: Polymer Phys, vol.41, 2003
Çetinkara H., Türüt A., Zengin D., Erel Ş., "The Energy Distribution Of The Interface State Density Of Pb/P-Si Schottky Contacts Exposed To Clean Room Air", Applied Surface Science, vol.207, pp.1-4, 2003
Nuhoğlu Ç., Aydoğan Ş., Türüt A., "The Barrier Height Inhomogeneity In Identically Prepared Pb/P-Type Sischottky Barrier Diodes", Semiconductor Science and Technology, vol.18, 2003
Biber M., Türüt A., "The Cu/N-Gaas Schottky Barrier Diodes Prepared By Anodization Process", Journal of Electronic Materials, vol.31, pp.1362-1368, 2002
Türüt A., Onganer Y., Çakar M., "The Conductance- And Capacitance-Frequency Characteristics Of The Rectifying Junctions Formed By Sublimation Of Organic Pyronine-B On P-Type Silicon ", Journal of Solid State Chemistry, vol.168, 2002
Gümüş A., Türüt A., Yalçın N. , "Temperature Dependent Barrier Characteristics Of Crnico Alloy Schottky Contacts", Journal of Applied Physics, vol.91, 2002
Biber M., Temirci C., Türüt A., "Barrier Height Enhancement In The Au/N-Gaas Schottky Diodes With Anodization Process", J. Vac. Sci. Technol. B, vol.20, pp.10-13, 2002
Çakar M., Onganer Y., Türüt A., "The Nonpolymeric Organic Compound (Pyronine-B)/P-Type Silicon/Sn Contact Barrier Devices", Synthetic Metals, vol.126, pp.213-218, 2002
Ayyıldız E. , Nuhoğlu Ç., Türüt A., "The Determination Of The Interface State Density Distribution From The Capacitance-Frequency Measurements In Au/N-Si Schottky Barrier Diodes", J. Electron. Mater, vol.31, pp.119-123, 2002
Özdemir A.F., Kökçe A., Türüt A., "The Effects Of The Time-Dependent And Exposure Time To Air On Au/N-Gaas Schottky Barrier Diodes", Applied Surface Science, vol.191, 2002
Çakar M., Temirci C., Türüt A., "Determination Of The Density Distribution Of Interface States From High- And Low-Frequency Capacitance Characteristics Of The Tin/Organic Pyronine-B/P-Type Silicon Structure", ChemPhysChem, vol.3, pp.701-704, 2002
Biber M., Çakar M., Türüt A., "The Effect Of The Anodic Oxide Treatment On N-Gaas Schottky Barrier Diodes", Journal of Materials Science- Materials in Electronics, vol.12, 2001
Temirci C., Batı B., Sağlam M. , Türüt A., "High-Barrier Height Sn/P-Si Schottky Diodes With Interfacial Layer By Anodization Process", Applied Surface Science, vol.172, pp.1-7, 2001
Temirci C., Ayyıldız E. , Batı B., Türüt A., "The Effect Of Series Resistance On Calculation Of The Interface State Density Distribution In Schottky Diodes", International Journal of Electronics, vol.88, 2001
Batı B., Nuhoğlu Ç., Sağlam M. , Ayyıldız E. , Türüt A., "On The Forward Bias Excess Capacitance At The Intimate And Mis Schottky Barrier Diodes With Perfect Or Imperfect Ohmic Back Contact", Physica Scripta, vol.61, 2000
Abay B., Onganer Y., Sağlam M. , Efeoğlu H., Türüt A., Yoğurtçu Y.K., "Current-Voltage And Capacitance-Voltage Characteristics Of Metallic Polymer/Inse(:Er) Schottky Contacts", Microelectronic Engineering, vol.51-52, 2000
Nuhoğlu Ç., Temirci C., Biber M., Türüt A., "Effect Of Thermal Annealing On Co/N-Lec Gaas Schottky Contacts", Solid State Communications, vol.115, 2000
Çankaya G., Uçar N., Türüt A., "Reverse Bias Capacitance-Voltage Characteristics Of Au/N-Gaas Schottky Diodes Under Hydrostatic Pressure", International Journal of Electronics, vol.87, 2000
Çankaya G., Uçar N., Türüt A., "An Investıgation Of I-V Characteristics Of Au/N-Gaas Schottky Diodes After Hydrostatic Pressure", physica status solidi (a), vol.179, 2000
Nuhoğlu Ç., Sağlam M. , Türüt A., "Cr/- And Fe/N- Gaas Schottky Diodes: The Stable Current-Voltage Characteristic Produced By High-Temperature", Semiconductor Science and Technology, vol.14, 1999
Ayyıldız E. , Türüt A., "The Effect Of Thermal Treatment On The Characteristic Parameters Of Ni/- , Ti/- And Niti Alloy/N- Gaas Schottky Diodes", Solid-State Electronics, vol.43, 1999
Çankaya G., Uçar N., Efeoğlu H., Türüt A., Tüzümen S., Yoğurtçu Y.K., "Effect Of Hydrostatic Pressure On Characteristics Parameters Of Au/N-Gaas Schottky Barrier Diodes", Physical Review B, vol.60, 1999
Ayyıldız E. , Batı B., Temirci C., Türüt A., "Dependence Of Thermal Annealing On The Density Distribution Of Interface States In Ti/N-Gaas (Te) Schottky Diodes", Applied Surface Science, vol.152, 1999
Çetinkara H., Sağlam M. , Türüt A., Yalçın N., "The Effect Of The Time-Dependent And Expore Time To Air On Au/Epilayer N-Si Schottky Diodes", The European Physical Journal Applied Physics, vol.6, 1999
Ayyıldız E. , Türüt A., Tüzümen S., "Thermal Stability Of Niti Alloy Contacts On N-Type Liquid Encapsulated Czochralski Gaas", Solid State Communications, vol.110, 1999
Türüt A., Gümüş A., Sağlam M. , Tüzümen S., Efeoğlu H., "Thermal Stability Of Cr-Ni-Co Alloy Schottky Contacts On Mbe N-Gaas", Semiconductor Science and Technology, vol.13, 1998
Ayyıldız E. , Sağlam M. , Nuhoğlu Ç., Türüt A., "The Effect Of Thermal Annealing On Series Resistance Of Nwarly Ideal And Ideal Ti/N-Gaas Schottky Diodes", Physica Scripta, vol.58, 1998
Nuhoğlu Ç., Ayyıldız E. , Sağlam M. , Türüt A., "Thermal Treatment Of The Mis And Intimate Ni/N-Lec Gaas Schottky Barrier Diodes", Applied Surface Science, vol.135, 1998
Türüt A., Sağlam M. , "Effect Of Thermal Annealing In Nitrogen On The I-V And C-V Characteristics Of Cr-Ni-Co Alloy/Lec N-Gaas Schottky Diodes", Semiconductor Science and Technology, vol.12, 1997
Sağlam M. , Türüt A., Nuhoğlu Ç., Efeoğlu H., Kılıçoğlu T., Ebeoğlu M.A., ", Influence Of Thermal Annealing, The Lectrolyte Ph, And Current Density On The Interface State Density Distribution Of Anodic Mos Structures", Applied Physics A, vol.65, 1997
Abay B., Onganer Y., Sağlam M. , Efeoğlu H., Türüt A., Yoğurtçu Y.K., "Characteristics Of Metallic Polymer And Au Schottky Contacts On Cleaved Surfaces Of Inse(:Er)", Solid-State Electronics, vol.41, 1997
Onganer Y., Sağlam M. , Türüt A., Efeoğlu H., Tüzümen S., " High Barrier-Metallic Polymer/P-Type Silicon Schottky Diodes", Solid-state electronics, vol.39, 1996
Sağlam M. , Ayyıldız E. , Gümüş A., Türüt A., Efeoğlu H., Tüzümen S., "The Series Resistance Calculation At Mis Schottky Barrier Diodes", Applied Physics A, vol.62, 1996
Ayyıldız E. , Türüt A., Efeoğlu H., Tüzümen S., Sağlam M. , Yoğurtçu Y.K., "Effect Of Series Resistance On The Forward Current-Voltage Characteristics Of Schottky Diodes In The Presence Of Interfacial Layer", Solid-State Electronics, vol.39, 1996
Türüt A., Batı B., Kökçe A., Sağlam M. , Yalçın N. , "The Bias-Dependence Change Of Barrier Height Of Schottky Diodes Under Forward Bias By Including The Series Resistance Effect", Physica Scripta, vol.53, 1996
Türüt A., Sağlam M. , Efeoğlu H., Yalçın N. , Yıldırım M., Abay B., "Interpreting The Nonideal Reverse Bias C-V Characteristics And Importance Of The Dependence Of Schottky Barrier Height On Applied Voltage", Physica B, vol.205, 1995
Kılıçoğlu T., Öztürk Z., Ebeoğlu M.A., Türüt A., Özdemir M., Altındal A., "Effect Of Electrolyte Ph On Electrical Properties Of The Interface Between N-Insb And Its Anodic Native Oxide", Indian J. Pure Appl. Phys, vol.33, 1995
Köleli F., Sağlam M. , Türüt A., Efeoğlu H., "Polyindole-Based Schottky Diode", Tr. J. of Chemistry, vol.18, 1994
Türüt A., Köleli F., "Metallic Polythiophene/Inorganic Semiconductor Schottky Diodes", Physica B, vol.192, 1993
Türüt A., Köleli F., "Semiconductive Polymer-Based Schottky Diode", J. Appl. Phys, vol.72, 1992
Türüt A., Tüzümen S., Yıldırım M., Abay B., Sağlam M., "Barrier Height Enhancement By Annealing Cr-Ni-Co Alloy Schottky Contacts On Lec Gaas", Solid-State electronics, vol.35, 1992
Türüt A., Sağlam M. , "The Determination Of The Density Of Si-Metal Interface States And Excess Capacitance Caused By Them", Physica B, vol.179, 1992
Türüt A., Sağlam M. , Yalçın N. , "Parameter Extraction From Non-Ideal C-V Characteristic Of A Schottky Diode With And Without Interfacial Layer", Solid-State Electronics, vol.35, 1992
DİĞER DERGİLERDE YAYINLANAN MAKALELER
Karabulut A., Orak İ., Türüt A., "Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer", International Journal of Chemistry and Technology, vol.2, no.2, pp.116-122, 2018 (Link)
Karabulut A., Efeoğlu H., Türüt A., "Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures", JOURNAL OF SEMICONDUCTORS, vol.38, 2017 (Link)
Türüt A., Ejderha K., Yildirim N., Abay B., "Characteristic diode parameters in thermally annealed Ni/p-InP contacts", JOURNAL OF SEMICONDUCTORS, vol.37, 2016
Türüt A., "Determination Of Barrier Height Temperature Coefficient By Norde’S Method In Ideal Co/N-Gaas Schottky Contacts", Turkish Journal of Physics, cilt.36, ss.235-244, 2012 (Link)
HAKEMLİ KONGRE / SEMPOZYUMLARIN BİLDİRİ KİTAPLARINDA YER ALAN YAYINLAR
Türüt A., "VOLTAGE-DEPENDENT SERIAL RESISTANCE OF Ni/n-GaP SCHOTTKY DIODE", INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIALS AND DEVICES ICSMD-2017, KONYA, TÜRKIYE, 17-19 Ağustos 2017, ss.170-170 (Link)
Türüt A., Karabulut A., Karataş Ş., "The electrical and dielectric properties of Au/Ti/HfO2/n-GaAs structures in wide temperature range", 4th INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND NANOTECHNOLOGY FOR NEXT GENERATION (MSNG2017), Sarajevo/BOSNIA, BOSNA HERSEK, 28-30 Haziran 2017, pp.320-323 (Link)
Türüt A., Yıldırım N., "Current Voltage and Capacitance Voltage Characteristics of Sputtered Ni/n-GaAs Schottky diodes", International Congress on Semiconductor Materials and Devices” (ICSMD-2017), KONYA, TÜRKIYE, 17 Ağustos - 19 Eylül 2017, pp.17-17 (Link)
Türüt A., Yıldırım N. , Ejderha K., "Ni/n-GaN Schottky diyotların Ellektriksel Karakteristikleri Üzerine Numune Sıcaklığının ve Isıl Tavlamanın Etkileri (Effect of thermal annealing and sample temperature on electrical characteristics of Ni/n-GaN Schottky contacts) ", IPCAP 2016 – INTERNATIONAL PHYSICS CONFERENCE AT THE ANATOLIAN PEAK, ERZURUM, TÜRKIYE, 25-27 Şubat 2016, pp.160-160 (Link)
Türüt A., Karabulut A., "Some Electrical Characteristics Of GaAs–Based MIS Structures With Atomic Layer Deposited Thin HfO2 Interfacial Layer", NANOSCIENCE&NANOTECHNOLOGY FOR NEXT GENERATION-NanoNG-2016, ANTALYA, TÜRKIYE, 20-22 Ekim 2016, pp.83-83 (Link)
Türüt A., Doğan H., Yildirim N., "Characteristic diode parameters of thermally annealed Ni/n-GaAs Schottky contacts over a wide measurement temperature range ", International Physics Conference at the Anatolian Peak, IPCAP 2016 , ERZURUM, TÜRKIYE, 25-27 Şubat 2016, pp.57-57 (Link)
Güllü O., Arsel I., Özkan S., Özaydin C., Pakma O., Türüt A., "Electrical Parameters of Safranine T/n-Si Contacts", 9 th International Physics Conference of The Balcan Physical Union BPU-9, İSTANBUL, TÜRKIYE, 24-29 Ağustos 2015, pp.0-0
Özkan S., Güllü O., Arsel I., Özaydin C., Pakma O., Türüt A., "I-V and C-V-f Characteristics of Anniline Green/n-Type Silicon Diode", 9 th International Physics Conference of The Balcan Physical Union BPU-9, İSTANBUL, TÜRKIYE, 24-29 Ağustos 2015, pp.0-0
Güllü O., Arsel I., Pakma O., Özaydin C., Türüt A., "I-V Characteristics of The Orange G/p-Type Silicon Cotacts", ADIM Günleri-IV , KÜTAHYA, TÜRKIYE, 28-29 Mayıs 2015, ss.0-0
Güllü O., Pakma O., Arsel I., Türüt A., "The Electrıcal Characteristics of the Al/Congo Red (CR)/p-Si Semıconductor Diodes", ADIM Günleri-IV , KÜTAHYA, TÜRKIYE, 28-29 Mayıs 2015, ss.0-0
Türüt A., Karabulut A., Biyikli N., "Atomic Layer Deposited Ultra Thin HfO2 Interfacial Layer Grown on GaAs-based MIS Structure in 60-400 K Temperature Range", International Conference On Nanoscience and Nanotechnology For Next Generation-Nanong, ANTALYA, TÜRKIYE, 29-31 Ekim 2015, pp.0-0
Türüt A., Karabulut A., Efeoğlu H., Biyikli N., "Current-Capacitance-Voltage Characteristics for the Au/Ti/Al2O3/n-GaAs Structure in 20-300 K range", International Semiconductor Science and Techology Conference-ISSTC, İZMİR, TÜRKIYE, 11-13 Mayıs 2015, pp.0-0
Orak İ., Ejderha K., Yıldırım N., Karabulut A., Türüt A., "The Electrical And Photovoltaic Effect Of Co/N-Gap Schottky Diode", International Semiconductor Science and Technology Conference-2014, TÜRKIYE, 13-15 ocak-2014
Karteri İ. , Özerli H., Karataş Ş., Bakkaloğlu Ö.F., Türüt A., "Electrical Properties Of I-V And C-V Characteristics Of The Au/N-Gaas Schottky Diodes At High Temperatures", International Semiconductor Science and Technology Conference-2014, TÜRKIYE, 13-15 ocak-2014
Orak İ., Doğan H., Ejderha K., Yıldırım N., Türüt A., "Capacitance–Voltage Characteristics Of Ni/Au/N-Gan Contacts", International Semiconductor Science and Technology Conference-2014, TÜRKIYE, 13-15 ocak-2014
Güllü Ö., Asubay S., Kılıçoğlu T., Biber M., Türüt A., "Effects Of The Radiation On Al/Organic Film/P-Silicon Semiconductor Diode", International Semiconductor Science and Technology Conference-2014, TÜRKIYE, 13-15 ocak-2014
İlgü G., Çağlar Y., İlican S., Çağlar M., Rüzgar Ş., Türüt A., "The Effect of Sol Concentration on The Structural and Electrical Parameters of Nanostructure ZnO Films by Sol Gel Dip Coating", NanoNG-14 International Conference, ELAZIĞ, TÜRKIYE, 20 Ağustos 2015 - 22 Ağustos 2014, pp.0-0
Ejderha K., Karabulut A., Türüt A., "Homogenous Barrier Height Work On Ni/Epi-N-Si Structure", International Semiconductor Science and Technology Conference-2014, TÜRKIYE, 13-15 ocak-2014
Göksu T., Özdemir A.F., Uçar N., Türüt A., "Metal-Thickness Dependence On The Electrical Properties Of Ideal Ti/N-Gaas Schottky Contacts", International Semiconductor Science and Technology Conference-2014, TÜRKIYE, 13-15 ocak-2014
Karabulut A., Ejderha K., Haider A., Bıyıklı N., Türüt A., "Illumination Impact On The Electrical Characteristics Of Sputtered Au/Ti/ Al2o3/N-Gaas Schottky Diodes With Atomic Layer Deposited Al2o3 Interfacial Layer", International Semiconductor Science and Technology Conference-2014, TÜRKIYE, 13-15 ocak-2014
Orak İ., Ejderha K., Yıldırım N., Türüt A., "The Comparison Of Electrical Properties Of Au/Graphene/P-Si And Graphene/P-Si", BSW2013 Fourth Scıence Workshop: Studies on Structure and Dynamıcs from Nucleus to Clusters, Yozgat,, YOZGAT, TÜRKİYE, 16-18 May 2013
Ejderha K., Yıldırım N., Orak İ., Türüt A., "Investigation Of Photvoltaic Property For Sputtered Al/P-Si/Al Structure", BSW2013 Fourth Scıence Workshop: Studies on Structure and Dynamıcs from Nucleus to Clusters, Yozgat, , YOZGAT, TÜRKİYE, 16-18 May 2013, ss.11-12
Yıldırım N., Ejderha K., Orak İ., Türüt A., "Temperature Dependence Current Voltage Characteristics Of Cr/N-Gan Schottky Diodes", BSW2013 Fourth Scıence Workshop: Studies on Structure and Dynamıcs from Nucleus to Clusters, YOZGAT, TÜRKİYE, 16-18 Mayıs 2013, ss.10-11
Türüt A., Orak İ., Ejderha K., Yıldırım N., "Investigation Of Electrical Properties Crti/N-Gan Nano Structure", BSW2013 Fourth Scıence Workshop: Studies on Structure and Dynamıcs from Nucleus to Clusters, Yozgat, , YOZGAT, TÜRKİYE, 16-18 May 2013
Türüt A., Orak I., Ejderha K., Yıldırım N., Ürer M., "E-Beam Litografi Ile Iii-V Grubu Yarıiletken Üzerine Metal Nano-Lontakların Oluşturulması", 29. TFD-Uluslararası FİZİK Kongresi, İZMİR, TÜRKİYE, 5-8 eylül 2012
Türüt A., Güllü Ö., Özerden E., Rüzgar Ş., Asubay S., Pakma O., Kılıçoğlu T., "Characterization Of Au/N-Inp Photovoltaic Structure With Organic Thin Film", 4th Hybrid and Organic Photovoltaics Conference, ISVEÇ, 6-9 mayıs 2012
Türüt A., Kılınç T., Tekin E., "A Molecular Dynamic Approachtothe Aggregation Of Amyloid Aβ (17-21) Peptides", 10. Kimyasal Fizik Kongresi (CPC-X), ANKARA, TÜRKİYE, 10-12 ekim 2012
Türüt A., Kılınç T., Tekin E., "Molecular Dynamics Simulations Of Aβ(16-22) Peptides Aggregation", 8. Nanoscience&Nanotechnology Congress, ANKARA, TÜRKİYE, 25-29 haziran 2012, ss.0734 PP-207
Türüt A., "E-Beam Litografi Ile Iii-V Grubu Yarıiletken Üzerine Metal Nanokontakların Oluşturulması", 29. TFD-Uluslararası FİZİK Kongresi, TÜRKIYE, 5 - 8 Eylül 2012
Türüt A., Korucu D., "The Evaluation Of Temperature Dependent I-V And C-V Characteristics On Au/P-Inp Schottky Barrier Diode Prepared By Photolithography Technique", 29th International congress , TÜRKIYE, 22-24 eylül 2012
Türüt A., Güllü Ö., Özerden E., Kılıçoğlu T., "Current-Voltage, Capacitance-Voltage-Frequency And Interface Characteristics Of Metal/Organic Dye Molecule/P-Type Inp Photovoltaic Device", 2. Semiconductor Sensitized Solar Cell Conference, ISPANYA, 18-20 eylül 2011
Türüt A., Güllü Ö., Özerden E., Kılıçoğlu T., "Control Of Barrier Heigth Of Metal/Semiconductor Contacts By Molecular Organic Film", 7. International Conference on Organic Electronics, ITALYA, 22-24 haziran 2011
Türüt A., Korkut H., "Some Considerable Effects On Pt/N-Inp Schottky Diode Current-Voltage Characteristics Due To Electron Irradiation", on advances in Applied Physics and Material Science (201) American Institute of Physics, ABD, 27-29 aralık 2011, vol.1400, no.1, pp.497-501
Cimilli F., Sağlam M., Aydoğan Ş., Türüt A., "Aynı Şartlar Altında Hazırlanmış Au/N-Si/Au-Sb Mis Schottky Diyotlarının Idealite Faktörleri Ile Engel Yükseklikleri Arasındaki Ilişki", Geleneksel Erzurum Fizik Günleri-II, ERZURUM, TÜRKİYE, 25-28 mayıs 2005
Cimilli F., Sağlam M., Aydoğan Ş., Türüt A., "Au/N-Si/Au-Sb Schottky Diyodunun Akım-Voltaj Ve Kapasite-Voltaj Karakteristiklerinin Sıcaklığa Bağlı Değişimi", Geleneksel Erzurum Fizik Günleri-II, ERZURUM, TÜRKİYE, 25-28 mayıs 2005
Aydoğan Ş., Sağlam M., Türüt A., "Polipirol/P-Inp Yapının Bazı Karakteristik Parametrelerinin Akım-Voltaj, Kapasite-Voltaj Ve Kapasite-Frekans Ölçümlerinden Elde Edilmesi", Geleneksel Erzurum Fizik Günleri-II, ERZURUM, TÜRKİYE, 25-28 mayıs 2005
Cimilli F., Sağlam M., Aydoğan Ş., Türüt A., "Aynı Şartlar Altında Hazırlanmış Au/N-Si/Au-Sb Mis Schottky Diyotlarının C-V Ölçümlerinden Elde Edilen Engel Yükseklikleri Ve Taşıyıcı Konsantrasyonları", Geleneksel Erzurum Fizik Günleri-II , ERZURUM, TÜRKİYE, 25-28 mayıs 2005
Karataş Ş., Türüt A., Altındal Ş. , "Analysis Of I-V Characteristics Of Au/N-Type Gaas Schottky Diodes", Türk Fizik Derneği 23. Fizik Kongresi , MUĞLA, TÜRKİYE, 14–17 Eylül 2005
Karataş Ş., Altındal Ş., Türüt A., "Effect Of Series Resistance And Insulator Layer On The Current-Voltage Characteristics In Au/N-Gaas Schottky Diodes", Türk Fizik Derneği 22. Fizik Kongresi , MUĞLA, TÜRKİYE, 14 – 17 Eylül 2004
Aydoğan Ş., Sağlam M., Türüt A., "Au/Polianilin/P-Si Yapının Doğrultma Özelliğinin Incelenmesi", Türk Fizik Derneği 22.Fizik Kongresi , MUĞLA, TÜRKİYE, 14–17 Eylül 2004
Korucu D., Sağlam M., Türüt A., "Polipirol/P-Si/Al Diyodunun Karakteristik Parametrelerinin Zamana Bağlılığı", Türk Fizik Derneği 22.Fizik Kongresi, MUĞLA, TÜRKİYE, 14–17 Eylül 2004
Korucu D., Sağlam M., Türüt A., "Polipirol/P-Si/Al Diyodunun Parametrelerinin Artan Yaşlanma Zamanıyla Değişimi", Türk Fizik Derneği 22.Fizik Kongresi, MUĞLA, TÜRKİYE, 14–17 Eylül 2004
Aydoğan Ş., Sağlam M., Türüt A., "Polipirol/P-Si Ve Polipirol/N-Si Yapıların Bazı Karakteristik Parametrelerinin Akım-Voltaj Ve Kapasite-Voltaj Ölçümlerinden Elde Edilmesi", Türk Fizik Derneği 22.Fizik Kongresi , MUĞLA, TÜRKİYE, 14–17 Eylül 2004
Karataş Ş., Altındal Ş., Çakar M., Türüt A., "Sıcaklığın Bir Fonksiyonu Olarak Zn/P-Si Schottky Diyot Karakteristiklerinin İncelenmesi", 10. Yoğun Madde Fiziği Ankara Toplantısı, ANKARA, TÜRKİYE, 14 Kasım 2003
Altındal Ş., Karataş Ş., Türüt A., Çakar M., Özmen A., "İdeal Olmayan Schottky Diyotlarının Temel Parametrelerinin I-V Karakteristiklerinden Hesaplanması", Turkish Physical Society 21th Physics Conference, ISPARTA, TÜRKİYE, 2002
Karataş Ş., Altındal Ş., Türüt A., Özmen A., Çakar M., "Au/N-Gaas Schottky Diyotlarda Arayüzey Durum Yoğunluklarının Yasak Enerji Aralığındaki Dağılım Profilinin Akım-Voltaj (I-V) Karakteristiklerinden Elde Edilmesi", Turkish Physical Society 21th Physics Conference, ISPARTA, TÜRKİYE, 2002
Sağlam M., Türüt A., "A Comparative Study Of Interface State Density In Anodic And Thermal Mos Structures", Hellenic Physical Society & Turkish Physical Society, First Hellenic-Turkish International Physics Conference , TÜRKIYE, 10-15 September 2001
Biber M., Türüt A., "The Investigating Of The Ageing Effect On Au/-, Cu/N-Gaas Schottky Diodes Having Different Barrier Height With Anodic Oxidation", Balkan Physıcs Letters, TÜRKIYE, 10-15 Eylül 2001
Batı B., Temirci C., Sağlam M., Türüt A., "Au/N-Si Schottky Diyotlarda Omik Kontak Direncinin Kapasite-Frekans (C-F) Karakteristiklerine Etkisi", TFD 19. Fizik Kongresi, ELAZIĞ, TÜRKİYE, 26-29 Eylül 2000
Ayyıldız E., Sağlam M., Nuhoğlu Ç., Temirci C., Biber M., Türüt A., Yalçın N., "Au/N-Si Schottky Diyotların Kapasite-Frekans Karakteristiklerinden Arayüzey Hal Dağılım Eğrilerinin Belirlenmesi", YMF 2000, TFD II. Ulusal Yoğun Madde Fiziği Kongresi, ERZURUM, TÜRKİYE, 22-24 Haziran 2000
Ayyıldız E., Sağlam M., Nuhoğlu Ç., Temirci C., Biber M., Türüt A., "Au/N-Si Metal-Yarıiletken Kontaklarında Arayüzey Hallerinin Dağılım Eğrilerinin Ve Bazı Diyot Parametrelerinin Belirlenmesi", TFD-18 Ulusal Fizik Kongresi , ADANA, TÜRKİYE, 25-28 Ekim 1999
Çetinkara H., Sağlam M., Türüt A., Yalçın N., "Epitaksiyel Silisyum’Dan Yapılan Au/N-Si Schottky Diyotlarına Havaya Maruz Bırakılma Süresinin Etkileri", TFD-17 Ulusal Fizik Kongresi , ANTALYA, TÜRKİYE, 27-31 Ekim 1998
Gümüş A., Sağlam M., Tüzemen S., Efeoğlu H., Türüt A., Yalçın N., "Düşük Sıcaklıklarda Mbe Crnico/N-Gaas Schottky Diyotlarında I-V Karakteristiklerinin Analizi", TFD-17 Ulusal Fizik Kongresi , ANTALYA, TÜRKİYE, 27-31 Ekim 1998
Çetinkara H., Sağlam M., Ayyıldız E., Nuhoğlu Ç., Türüt A., Yalçın N., "Epitaksiyel Olarak Büyütülmüş N-Si Ile Yapılan Au / N-Si Schottky Diyotların Karakteristik Parametrelerinin Belirlenmesi", 16 Ulusal Fizik Kongresi , BALIKESİR, TÜRKİYE, 26-29 Ağustos 1996
Efeoğlu H., Tüzemen S., Yıldırım M., Abay B., Türüt A., Sağlam M., Gürbulak B., Yoğurtçu Y., "Tam Otomatik Fotolüminesans Sisteminin Dizaynı Ve Yarıiletken Karakterizasyonunda Uygulanması", TFD-15 Ulusal Fizik Kongresi, ANTALYA, TÜRKİYE, 26-29 Eylül 1995
Sağlam M., Türüt A., Efeoğlu H., Yıldırım M., Yoğurtçu Y., "Al / Anodik Sio2 / P-Si Mos Yapılarında Arayüzey Hal Yoğunluk Dağılımı Üzerine Termal Tavlama Ve Anodik Oksidasyon Parametrelerinin Etkisi", TFD-15 Ulusal Fizik Kongresi , ANTALYA, TÜRKİYE, 26-29 Eylül 1995
Efeoğlu H., Tüzemen S., Sağlam M., Türüt A., Abay B., Yıldırım M., Gürbulak B., Coşkun C., Yoğurtçu Y., "Lec Tekniğiyle Büyütülmüş Gaas 'In Kuantum Veriminin Lazer Yardımıyla Anodik Oksidasyon Ile Artırılması", TFD-15 Ulusal Fizik Kongresi , ANTALYA, TÜRKİYE, 26-29 Eylül 1995
Dartıcı A., Gümüş A., Yalçın N., Türüt A., Sağlam M., "P-Si Kristalinden Yapılan Simetrik Yapıların I(V) Ve C(V) Karakteristiklerinden Bazı Parametrelerin Hesaplanması", TFD-13 Ulusal Fizik Kongresi, ESKİŞEHİR, TÜRKİYE, 30 Eylül-2 Ekim 1992
Gümüş A., Yalçın N., Türüt A., Sağlam M., Dartıcı A., "Seri Dirençli Cu/P-Si Schottky Diyodunda Bazı Parametrelerin Tayini", TFD-13 Ulusal Fizik Kongresi, ESKİŞEHİR, TÜRKİYE, 30 Eylül-2 Ekim 1992
KİTAP ve KİTAP BÖLÜMLERİ
Türüt A., Korkut H., Doğan H., Korkut T., "Estimation Of Neutron Irradiation Damages In Ni/N-Gaas Schottky Contact Layers Via Fluka Monte Carlo Simulations", Nuclear Science and Technology, Korkut T., Ed., Transworld Research Network, Kerala, ss.51-58-, 2012 (Link) (Abstract)
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